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Introduction
CASTECH grows Nd:YLF crystals using Czochralski method. The use of high quality starting materials for crystal growth, whole boule interferometry, and precise inspection of scattering particle in crystal using He-Ne laser assure that each crystal will perform well.
CASTECH's general Nd:YLF production capabilities including
Table 1. Basic Properties
|
Chemical Formula |
LiY1.0-xNdxF4 |
|
Crystal Structure |
Tetragonal |
|
Space Group |
I41/a |
|
Nd atoms / cm3 |
1.40 × 1020 atoms/cm3 for 1% Nd doping |
|
Modulus of Elasticity |
85 GPa |
|
Lattice Parameter |
a = 5.16 Å, c = 10.85 Å |
|
Melting Point |
819℃ |
|
Mohs Hardness |
4~5 Mohs |
|
Density |
3.99 g/cm3 |
|
Thermal Conductivity |
0.063 W/cm/K |
|
Specific Heat |
0.79 J/g/K |
|
Thermal Expansion Coefficient |
8.3 × 10-6 /K∥c, 13.3×10-6 /K⊥c |
Table 2. Optical Properties
|
Transparency Range |
180-6700 nm |
|
Peak Stimulated Emission Cross Section |
1.8 × 10-19 /cm2 (E∥c) at 1047 nm 1.2 × 10-19 /cm2 (E⊥c) at 1053 nm |
|
Fluorescence Lifetime |
485 µs for 1% Nd doping |
|
Scatter Losses |
< 0.2% /cm |
|
Peak Absorption Coefficient (for 1.2% Nd) |
α = 10.8 cm-1 (792.0 nm E∥c) α = 3.59 cm-1 (797.0 nm E⊥c) |
|
Laser Wavelength |
1047 nm (∥c, a-cut crystal) 1053 nm (⊥c, a or c-cut crystal) |
|
Sellmeier Equations (λ in µm): no2 = 1.38757 + 0.70757λ2 / (λ2 - 0.00931) + 0.18849λ2 / (λ2 - 50.99741) ne2 = 1.31021 + 0.84903λ2 / (λ2 - 0.00876) + 0.53607λ2 / (λ2 - 134.9566) |
|
Table 3. Index of Refraction
|
Wavelength (nm) |
no |
ne |
|
262 |
1.485 |
1.511 |
|
350 |
1.473 |
1.491 |
|
525 |
1.456 |
1.479 |
|
1050 |
1.448 |
1.47 |
|
2065 |
1.442 |
1.464 |
Table 4. dn / dT
|
Wavelength (nm) |
E // c |
E ⊥ c |
|
436 |
-2.44 × 10-6/℃ |
-0.54 × 10-6/℃ |
|
578 |
-2.86 × 10-6/℃ |
-0.91 × 10-6/℃ |
|
1060 |
-4.30 × 10-6/℃ |
-2.00 × 10-6/℃ |
Specifications of Nd:YLF crystal from CASTECH
Table 5. Specifications
|
Standard Dopant Concentration |
Nd: 1.1 ± 0.1% |
|
Surface quality (scratch/dig) |
10/5 to MIL-PRF-13830B |
|
Wavefront Distortion |
≦ λ/4 @633 nm |
|
Surface Flatness |
λ/8 @633 nm |
|
Parallelism |
20 arc sec |
|
Perpendicularity |
≦ 15 arc min |
|
Chamfer |
≦ 0.2 mm × 45° |
|
End Coating |
R < 0.15% @1047/1053 nm |